Samsung Galaxy S23: slower memory in entry-level model?
The base Samsung Galaxy S23 can handle UFS 3.1, which is far from the UFS 4.0 performance of other models.
How much storage you decide to take for your Galaxy S23 may make more of a difference than just how much you have, as you’ve seen with the brand’s previous devices. The 128GB variant of the base model of the Galaxy S23 will use a UFS 3.1 chip rather than the newer Samsung UFS 4.0 standard, according to a source well-versed in the Samsung ecosystem, Ice Universe. Buyers will have to shell out more for the 256GB version if they want the latest storage technology. According to Ice Universe, this could be explained by Samsung not making 128GB UFS 4.0 chips.
Base Samsung Galaxy S23 can get by with UFS 3.1
The South Korean giant has been talking a lot about UFS 4.0 since the announcement of the standard last year. The company specifically explained that these new chips are twice as fast as UFS 3.1 memory. UFS 4.0 delivers sequential read and write speeds of up to 4200MB/s and 2800MB/s, respectively. They are also 46% more efficient, which can have a real impact on the battery life of smartphones using this technology.
far from UFS 4.0 performance of other models
However, it should be borne in mind that the information from the Ice Universe is not absolute truth. A number of leaks hint that all S23 models will have 256GB of storage. Other reports, on the other hand, claim that Samsung will offer a memory upgrade for those who pre-order the Galaxy S23. Either way, UFS 4.0 should be a big improvement, but if you decide to save some money by going for the 128GB model, don’t hesitate too long. Samsung has no plans to equip its base Galaxy S23 with eMMC or the old UFS 2.1.
It is understood that the 128GB S23 uses UFS 3.1. There are indications that Samsung does not appear to be producing the 128GB version of the UFS 4.0 chip. Currently only Kioxia is known to have produced 128GB UFS4.0, but via Xiaomi 13 128GB UFS4 chip
— Ice Universe (@UniverseIce) January 28, 2023
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